US Patent Issued to SOULBRAIN on Sept. 23 for "Growth inhibitor for forming thin film, method of forming thin film using growth inhibitor, and semiconductor substrate fabricated by method" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,421,599, issued on Sept. 23, was assigned to SOULBRAIN Co. LTD. (Gyeonggi-do, South Korea).

"Growth inhibitor for forming thin film, method of forming thin film using growth inhibitor, and semiconductor substrate fabricated by method" was invented by Chang Bong Yeon (Gyeonggi-do, South Korea), Jin Hee Kim (Gyeonggi-do, South Korea), Jae Sun Jung (Gyeonggi-do, South Korea), Jong Moon Kim (Gyeonggi-do, South Korea), Seung Hyun Lee (Gyeonggi-do, South Korea) and Seok Jong Lee (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film ...