US Patent Issued to SOULBRAIN on Oct. 21 for "Growth inhibitor for forming thin film, method for forming thin film and semiconductor substrate prepared therefrom" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,448,685, issued on Oct. 21, was assigned to SOULBRAIN Co. LTD. (Gyeonggi-do, South Korea).

"Growth inhibitor for forming thin film, method for forming thin film and semiconductor substrate prepared therefrom" was invented by Changbong Yeon (Seongnam-si, South Korea), Jaesun Jung (Seongnam-si, South Korea), Hyeran Byun (Seongnam-si, South Korea), Taeho Song (Seongnam-si, South Korea), Sojung Kim (Seongnam-si, South Korea) and Seokjong Lee (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared ...