ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,082, issued on Sept. 16, was assigned to Soochow University (Suzhou, China).
"Field effect transistor device" was invented by Mingxiang Wang (Suzhou, China), Lekai Chen (Suzhou, China), Dongli Zhang (Suzhou, China) and Huaisheng Wang (Suzhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention discloses a field effect transistor device for improving the problem of the short-channel effect of a field effect transistor in the prior art, comprising: an active layer, comprising a source region, a drain region, and a channel region located between the source region and the drain region; a gate provided around the channel region; a...