US Patent Issued to SOOCHOW UNIVERSITY on May 20 for "Use of ionization radiation source in preparation of porous crystalline material" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,304,923, issued on May 20, was assigned to SOOCHOW UNIVERSITY (Suzhou, China).

"Use of ionization radiation source in preparation of porous crystalline material" was invented by Shuao Wang (Suzhou, China), Mingxing Zhang (Suzhou, China) and Junchang Chen (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides use of an ionization radiation source in preparation of a porous crystalline material, and a method for preparing a MOFs material and a COFs material. In the present invention, the ionization radiation source is used for preparing the porous crystalline material; under the irradiation of the ionization radiation...