ALEXANDRIA, Va., June 4 -- United States Patent no. 12,318,763, issued on June 3, was assigned to SOOCHOW UNIVERSITY (Suzhou, China).
"Z-type heterojunction composite material of tungsten oxide nanorod/titanium carbide quantum dot/indium sulfide nanosheet, preparation method therefor and application thereof" was invented by Jianmei Lu (Suzhou, China) and Najun Li (Suzhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a Z-type heterojunction composite material of a tungsten oxide nanorod/a titanium carbide quantum dot/an indium sulfide nanosheet, a preparation method therefor and an application thereof. The method includes: preparing a titanium carbide quantum dot by using freeze-thaw and...