US Patent Issued to Soochow University on April 15 for "Field effect transistor device, and method for improving short-channel effect and output characteristic thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,443, issued on April 15, was assigned to Soochow University (Suzhou, China).

"Field effect transistor device, and method for improving short-channel effect and output characteristic thereof" was invented by Mingxiang Wang (Suzhou, China), Lekai Chen (Suzhou, China), Dongli Zhang (Suzhou, China) and Huaisheng Wang (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a field effect transistor device and a method for improving the short-channel effect and the output characteristics using the same. The field effect transistor device comprises an active layer comprising a source region, a drain region, and a channel...