US Patent Issued to SONY SEMICONDUCTOR SOLUTIONS on Nov. 11 for "Resistance change memory, memory device, and memory system" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,538, issued on Nov. 11, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Kanagawa, Japan).

"Resistance change memory, memory device, and memory system" was invented by Haruko Takahashi (Kanagawa, Japan), Masami Kuroda (Kanagawa, Japan) and Hiroyuki Tezuka (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A leakage current of a MOS transistor that performs writing is reduced. The resistance change memory includes a memory cell, a write drive unit, a write control unit, and a well potential adjustment unit. The memory cell includes a resistance change element. The write drive unit applies a write voltage to the memory cell to perform writing of...