ALEXANDRIA, Va., June 17 -- United States Patent no. 12,316,987, issued on May 27, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Kanagawa, Japan).
"Solid-state imaging device" was invented by Satoko Iida (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A solid-state imaging device includes a photoelectric converter, a transfer gate transistor, and an overflow gate transistor. The photoelectric converter is provided in a semiconductor substrate and generates photocharge. The transfer gate transistor is provided at a surface of the semiconductor substrate as a vertical transistor and reads the photocharge stored in the photoelectric converter. The overflow gate transistor is provided at th...