ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,085, issued on May 20, was assigned to Sony Semiconductor Solutions Corp. (Kanagawa, Japan).
"Semiconductor device" was invented by Yuzo Fukuzaki (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a stacked structure having channel formation region layers CH1 and CH2, gate electrode layers G1, G2, and G3 alternately arranged on a base, in which a lowermost layer of the stacked structure is formed with a 1st layer G1 of the gate electrode layers, an uppermost layer of the stacked structure is formed with an Nth (where Nless than=3) layer G3 of the gate electrode layers, the gate electrode layers each have ...