ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,648, issued on May 13, was assigned to Sony Semiconductor Solutions Corp. (Kanagawa, Japan).
"Backside illuminated single photon avalanche diode" was invented by Adarsh Basavalingappa (Penfield, N.Y.), Cristian Tivarus (Pittsford, N.Y.), Sungin Hwang (Pittsford, N.Y.) and Yoshiaki Tashiro (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A sensor chip including a resistor and a backside illuminated single photon avalanche diode (SPAD) that is connected to the resistor; and a sensor including a sensor chip with a resistor and a backside illuminated SPAD that is connected to the resistor. The backside illuminated SPAD including an anode, a cathode...