ALEXANDRIA, Va., June 25 -- United States Patent no. 12,339,334, issued on June 24, was assigned to Sony Semiconductor Solutions Corp. (Kanagawa, Japan).

"Magnetoresistive element and semiconductor device" was invented by Katsumi Suemitsu (Yamagata, Japan), Makoto Ueki (Yamagata, Japan) and Masashige Moritoki (Yamagata, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive element of the present disclosure includes a multilayer structure made up of at least a fixed magnetization layer, an intermediate layer and a storage layer. A first side wall is formed on a side wall of the multilayer structure. A second side wall is formed on the first side wall. The first side wall is made of an insula...