ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,398, issued on July 29, was assigned to Sony Semiconductor Solutions Corp. (Kanagawa, Japan).
"Solid-state imaging element and electronic apparatus" was invented by Haruyuki Nakagawa (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "To enhance a charge transfer efficiency in a transfer gate having a vertical gate electrode. A solid-state imaging element includes a photoelectric conversion section, a charge accumulating section, and a transfer gate. The photoelectric conversion section is formed in a depth direction of a semiconductor substrate, and generates charges corresponding to a quantity of received light. The charge accumulating...