ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,721, issued on July 1, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Kanagawa, Japan).

"Semiconductor device and method of producing the same, and electronic device" was invented by Katsuhiko Takeuchi (Kanagawa, Japan) and Keita Takahashi (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The on-resistance of each of field effect transistors having different planar sizes is reduced. A semiconductor device includes first and second field effect transistors mounted on a semiconductor substrate and an insulating layer provided on a main surface of the semiconductor substrate. Here, each of the first and second field effect transistors...