US Patent Issued to Sony Semiconductor Solutions on Aug. 12 for "Semiconductor device including a field effect transistor with nanostructure based laminated channel structure and a field effect transistor with a single channel structure" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,647, issued on Aug. 12, was assigned to Sony Semiconductor Solutions Corp. (Kanagawa, Japan).

"Semiconductor device including a field effect transistor with nanostructure based laminated channel structure and a field effect transistor with a single channel structure" was invented by Tetsuo Gocho (Kanagawa, Japan), Yuzo Fukuzaki (Kanagawa, Japan), Shinichi Miyake (Kanagawa, Japan) and Kazuyuki Tomida (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a base, a first FET that includes at least two channel structure portions laminated, the channel structure portions each including a channel portion having a ...