ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,197, issued on Aug. 19, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Kanagawa, Japan) and SONY GROUP Corp. (Tokyo).
"Semiconductor device" was invented by Sei Fukushima (Tokyo), Yuya Kanitani (Tokyo) and Masashi Yanagita (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a barrier layer, a channel layer, a regrowth layer, a vacancy generation region, and a source electrode or a drain electrode. The barrier layer includes a first nitride semiconductor. The channel layer includes a second nitride semiconductor and is bonded to the barrier layer at a first surface. The regrowth layer includes an n-typ...