US Patent Issued to SONY on May 6 for "Method for manufacturing semiconductor device with recess, epitaxial growth and diffusion" (Japanese Inventor)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,157, issued on May 6, was assigned to SONY Corp. (Tokyo).

"Method for manufacturing semiconductor device with recess, epitaxial growth and diffusion" was invented by Takuji Matsumoto (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a gate electrode disposed on a semiconductor substrate and source/drain regions disposed at both sides of the gate electrode, the source/drain regions being formed by implanting impurities. The source/drain regions include an epitaxial layer formed by epitaxially growing a semiconductor material having a different lattice constant from that of the semiconductor substrate in ...