ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,445,102, issued on Oct. 14, was assigned to Soitec (Bernin, France).
"Method for preparing a thin layer of ferroelectric material" was invented by Alexis Drouin (La Buissiere, France), Isabelle Huyet (Crolles, France) and Morgane Logiou (Crolles, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for preparing a monodomain thin layer of ferroelectric material comprises: implanting light species in a ferroelectric donor substrate in order to form an embrittlement plane and to define a first layer therein; assembling the donor substrate with a support substrate by means of a dielectric assembly layer; and fracturing the donor substrate at the ...