US Patent Issued to Soitec on Nov. 18 for "Method for preparing the remainder of a donor substrate, substrate produced by said method, and use of such a substrate" (French Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,473,198, issued on Nov. 18, was assigned to Soitec (Bernin, France).

"Method for preparing the remainder of a donor substrate, substrate produced by said method, and use of such a substrate" was invented by Charlotte Drazek (Grenoble, France) and Djamel Belhachemi (Saint Martin d'heres, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is used to prepare the remainder of a donor substrate, from which a layer has been removed by delamination in a plane weakened by ion implantation. The remainder comprises, on a main face, an annular step corresponding to a non-removed part of the donor substrate. The method comprises the deposition of a smoo...