US Patent Issued to Soitec on June 3 for "Method for manufacturing a composite structure comprising a thin layer made of monocrystalline SiC on a carrier substrate made of SiC" (French Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,320,031, issued on June 3, was assigned to Soitec (Bernin, France).

"Method for manufacturing a composite structure comprising a thin layer made of monocrystalline SiC on a carrier substrate made of SiC" was invented by Hugo Biard (Grenoble, France), Ionut Radu (Crolles, France) and Didier Landru (Le Champ-pres-Froges, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a composite structure comprising a thin layer made of monocrystalline silicon carbide arranged on a carrier substrate made of silicon carbide, the method comprising: a) a step of providing a donor substrate made of monocrystalline SiC, the donor substrate comp...