US Patent Issued to Soitec on July 8 for "Method for the production of a single-crystal film, in particular piezoelectric" (French Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,858, issued on July 8, was assigned to Soitec (Bernin, France).

"Method for the production of a single-crystal film, in particular piezoelectric" was invented by Bruno Ghyselen (Seyssinet, France) and Jean-Marc Bethoux (La Buisse, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a monocrystalline layer comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called t...