ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,546, issued on July 29, was assigned to Soitec (Bernin, France).
"Supports for semiconductor structures" was invented by Young-Pil Kim (Grenoble, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A support for a semiconductor structure comprises a base substrate and a charge trapping layer on the base substrate. The charge trapping layer comprises an alternating stack of at least one polycrystalline charge trapping material and at least one polycrystalline interlayer. The charge trapping material has a grain size between 100 nanometers (nm) and 1000 nm, and/or a lattice parameter greater than a lattice parameter of the at least one interlayer. A...