US Patent Issued to SOITEC on July 15 for "Method for manufacturing a composite structure comprising a thin layer of monocrystalline SiC on an SiC carrier substrate" (French Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,173, issued on July 15, was assigned to SOITEC (Bernin, France).

"Method for manufacturing a composite structure comprising a thin layer of monocrystalline SiC on an SiC carrier substrate" was invented by Hugo Biard (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a composite structure comprises: a) providing an initial substrate made of monocrystalline silicon carbide, b) epitaxially growing a monocrystalline silicon carbide donor layer on the initial substrate to form a donor substrate, c) implanting ions into the donor layer to form a buried brittle plane defining the donor layer, d) depositing, using li...