US Patent Issued to Soitec on July 1 for "Methods of fabricating semiconductor structures including cavities filled with a sacrificial material" (American, French Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,344,524, issued on July 1, was assigned to Soitec (Bernin, France).

"Methods of fabricating semiconductor structures including cavities filled with a sacrificial material" was invented by Mariam Sadaka (Austin, Texas) and Ludovic Ecarnot (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming semiconductor structures comprising one or more cavities, which may be used in the formation of microelectromechanical system (MEMS) transducers, involve forming one or more cavities in a first substrate, providing a sacrificial material within the one or more cavities, bonding a second substrate over a surface of the first substrate, for...