US Patent Issued to SOITEC on Jan. 13 for "Method for transferring a thin layer onto a support substrate provided with a charge-trapping layer" (French Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,483, issued on Jan. 13, was assigned to SOITEC (Bernin, France).

"Method for transferring a thin layer onto a support substrate provided with a charge-trapping layer" was invented by Bruno Clemenceau (Bernin, France), Ludovic Ecarnot (Bernin, France), Aymen Ghorbel (Bernin, France), Marcel Broekaart (Bernin, France), Daniel Delprat (Bernin, France), Severin Rouchier (Bernin, France), Stephane Thieffry (Bernin, France) and Carine Duret (Bernin, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for transferring a thin layer onto a carrier substrate comprises preparing a carrier substrate using a preparation method involving supplying a ba...