US Patent Issued to Soitec on April 8 for "Method for producing a substrate for the epitaxial growth of a layer of a galium-based III-N alloy" (French Inventor)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,270,123, issued on April 8, was assigned to Soitec (Bernin, France).

"Method for producing a substrate for the epitaxial growth of a layer of a galium-based III-N alloy" was invented by Eric Guiot (Bernin, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing a substrate for the epitaxial growth of a gallium-based III-N alloy layer comprises the following successive steps: -providing a donor substrate of single-crystal silicon carbide; -implanting ions in the donor substrate to form an embrittlement zone defining a thin film layer of single-crystal SiC; -bonding the donor substrate onto a first receiving substrate via a bonding la...