US Patent Issued to Soitec, Commissariat A L'energie Atomique Et Aux Energies Alternatives on Nov. 11 for "Method for preparing a thin layer that includes forming a weakened zone in a central portion of a donor substrate that does not extend into a peripheral portion of the donor substrate and initiating and propagating a splitting wave in the weakened zone that does completely not propagate through the peripheral portion" (French Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,743, issued on Nov. 11, was assigned to Soitec (Bernin, France) and Commissariat A L'energie Atomique Et Aux Energies Alternatives (Paris).

"Method for preparing a thin layer that includes forming a weakened zone in a central portion of a donor substrate that does not extend into a peripheral portion of the donor substrate and initiating and propagating a splitting wave in the weakened zone that does completely not propagate through the peripheral portion" was invented by Frederic Mazen (Grenoble, France), Francois Rieutord (Grenoble, France), Marianne Coig (Grenoble, France), Helen Grampeix (Grenoble, France), Didier Landru (Le Champ-pres-Froges, France), Oleg Kononchuk (Theys, F...