ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,801, issued on Sept. 16, was assigned to SOCIONEXT INC. (Kanagawa, Japan).
"2-port SRAM comprising a CFET" was invented by Masanobu Hirose (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Transistors (N1 to N12) corresponding to drive transistors (PD1, PD2), access transistors (PG1, PG2), read drive transistor (RPD1), and read access transistor (RPG1) are formed in a lower portion of a cell. Transistors (P1, P2) corresponding to load transistors (PU1, PU2), respectively, are formed in an upper portion of the cell. The transistors (P1, P2) overlap the transistors (N3, N8), respectively, in plan view."
The patent was filed on Jan. 16,...