ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,301, issued on Oct. 14, was assigned to Socionext Inc. (Kanagawa, Japan).
"Semiconductor integrated circuit device" was invented by Isaya Sobue (Yokohama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A layout structure of a capacitive element using forksheet FETs is provided. A capacitive structure constituting the capacitive element includes: a first transistor having a first nanosheet extending in the X direction and a first gate interconnect extending in the Y direction and surrounding the periphery of the first nanosheet; and a second transistor having a second nanosheet extending in the X direction and a second gate interconnect extendi...