ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,266, issued on Nov. 11, was assigned to SOCIONEXT INC. (Kanagawa, Japan).
"Two port SRAM device using forked nanosheet FETs" was invented by Yoshinobu Yamagami (Yokohama, Japan) and Shinichi Moriwaki (Yokohama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor storage device including a two-port SRAM cell, in which nanosheets 21 to 24 are formed in line in this order in the X direction, and nanosheets 25 to 28 are formed in line in this order in the X direction. Faces of the nanosheets 21, 23, 25, and 27 on the first side in the X direction are exposed from gate interconnects 30, 33, 35, and 36, respectively. Faces of the nanoshee...