ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,103, issued on May 20, was assigned to SOCIONEXT INC. (Kanagawa, Japan).
"Semiconductor integrated circuit device having standard cells including three dimensional transistors" was invented by Yoko Shiraki (Yokohama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A layout structure of a standard cell using a complementary FET (CFET) is provided. First and second transistors that are three-dimensional transistors lie between first and second power supply lines as viewed in plan, the second transistor being formed above the first transistor in the depth direction. A first local interconnect is connected with the source or drain of the first tran...