ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,141, issued on March 18, was assigned to SOCIONEXT INC. (Kanagawa, Japan).
"Semiconductor integrated circuit device" was invented by Hideyuki Komuro (Yokohama, Japan) and Junji Iwahori (Yokohama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A layout structure of a capacitance cell using a complementary FET (CFET) is provided. A capacitance part includes a first three-dimensional transistor of a first conductivity type and a second three-dimensional transistor of a second conductivity type formed above the first transistor in the depth direction. The source and drain of the first transistor are both connected to VDD or VSS, and the source an...