ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,520, issued on June 24, was assigned to SOCIONEXT INC. (Kanagawa, Japan).
"Semiconductor storage device" was invented by Masanobu Hirose (Yokohama, Japan) and Yasunori Murase (Yokohama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Nanosheets 21 to 23 are formed in line in this order in the X direction, and nanosheets 24 to 26 are formed in line in this order in the X direction. In a buried interconnect layer, a power line 11 is formed between the nanosheets 22 and 25 as viewed in plan. A face of the nanosheet 22 on a first side as one of the sides in the X direction is exposed from a gate interconnect 32. A face of the nanosheet 25 on a seco...