US Patent Issued to SOCIONEXT on July 15 for "Semiconductor device having multiple fins on substrate" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,940, issued on July 15, was assigned to SOCIONEXT INC. (Kanagawa, Japan).

"Semiconductor device having multiple fins on substrate" was invented by Hirotaka Takeno (Yokohama, Japan), Atsushi Okamoto (Yokohama, Japan) and Wenzhen Wang (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate; first and second fins protruding from the substrate; a first transistor including the first fin; a second transistor above the first transistor; and a first power supply line electrically connected to the first fin through the second fin. The first transistor includes first and second impurity areas in the first f...