ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,232,308, issued on Feb. 18, was assigned to SOCIONEXT INC. (Kanagawa, Japan).
"Semiconductor storage device" was invented by Masanobu Hirose (Yokohama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Nanosheets 21a to 21d are formed in line in this order in the X direction, and nanosheets 21e to 21h are formed in line in this order in the X direction. Faces of the nanosheets 21c, 21f, and 21g on the first side as one of the opposite sides in the X direction are exposed from gate interconnects 31c, 31e, and 31f, respectively. Faces of the nanosheets 21a, 21b, 21d, 21e, and 21h on the second side as the other side in the X direction are exposed from ...