ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,409, issued on Aug. 26, was assigned to SOCIONEXT INC. (Kanagawa, Japan).
"Semiconductor integrated circuit device" was invented by Hiroyuki Shimbo (Yokohama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor integrated circuit device including a nanowire field effect transistor (FET) and having a layout configuration effective for making manufacturing the device easy. A standard cell having no logical function is disposed adjacent to a standard cell having a logical function. The standard cell includes nanowire FETs having nanowires and pads. The standard cell further includes dummy pads, which have no contribution to...