ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,828, issued on April 22, was assigned to SOCIONEXT INC. (Kanagawa, Japan).
"Semiconductor device" was invented by Atsushi Okamoto (Yokohama, Japan), Hirotaka Takeno (Yokohama, Japan) and Wenzhen Wang (Yokohama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first chip including a substrate and a first wiring layer formed on a first surface of the substrate; and a second wiring layer formed on a second surface of the substrate opposite to the first surface of the substrate. The second wiring layer includes a first power line to which a first power potential is applied; a second power line to which a second power...