US Patent Issued to SOCIONEXT on April 15 for "Semiconductor storage device having rom cells including nanosheet field effect transistors" (Japanese Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,419, issued on April 15, was assigned to SOCIONEXT INC. (Kanagawa, Japan).

"Semiconductor storage device having rom cells including nanosheet field effect transistors" was invented by Yasumitsu Sakai (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor storage device, a first ROM cell includes a first nanosheet FET having a first nanosheet as the channel region, provided between a first bit line and a first ground power supply line. A second ROM cell includes a second nanosheet FET having a second nanosheet as the channel region, provided between a second bit line and a second ground power supply line. The face of the fi...