US Patent Issued to SMARTER MICROELECTRONICS (GUANG ZHOU) on Nov. 4 for "Dual-band low-noise amplifier circuit, low-noise amplifier, and device" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,601, issued on Nov. 4, was assigned to SMARTER MICROELECTRONICS (GUANG ZHOU) Co. LTD. (Guangzhou, China).

"Dual-band low-noise amplifier circuit, low-noise amplifier, and device" was invented by Yaohua Zheng (Guangzhou, China), Minjun He (Guangzhou, China), Ping Li (Guangzhou, China) and Qiang Su (Guangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dual-band low-noise amplifier circuit includes an amplification sub-circuit and a switch frequency selection circuit; the amplification sub-circuit is used for performing gain amplification on a radio frequency signal to be amplified to obtain an amplified radio frequency signal, and outputti...