US Patent Issued to SMARTER MICROELECTRONICS (GUANG ZHOU) on Dec. 30 for "Bias circuit and RF power amplifier" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,800, issued on Dec. 30, was assigned to SMARTER MICROELECTRONICS (GUANG ZHOU) Co. LTD. (Guangzhou, China).

"Bias circuit and RF power amplifier" was invented by Zhenfei Peng (Guangzhou, China), Baiming Xu (Guangzhou, China) and Qiang Su (Guangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bias circuit includes a control loop, configured to output a bias current to the input end of the RF power amplifier; a regulation circuit, configured to adjust loop bandwidth of the control loop based on Miller effect when it is determined that the bias current output by the control loop can meet a first condition, so that stability and noise suppres...