US Patent Issued to Skorpios Technologies on May 13 for "Wafer-level etched facet for perpendicular coupling of light from a semiconductor laser device" (New Mexico Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,964, issued on May 13, was assigned to Skorpios Technologies Inc. (Albuquerque, N.M.).

"Wafer-level etched facet for perpendicular coupling of light from a semiconductor laser device" was invented by Murtaza Askari (Albuquerque, N.M.), Stephen B. Krasulick (Albuquerque, N.M.), Majid Sodagar (Albuquerque, N.M.) and John Zyskind (Albuquerque, N.M.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor laser device is provided. The semiconductor laser device includes: a substrate having a first facet; a guiding layer having a second facet through which an output light is configured to be emitted; a bottom dielectric layer between the substrate ...