ALEXANDRIA, Va., March 19 -- United States Patent no. 12,253,714, issued on March 18, was assigned to Skorpios Technologies Inc. (Albuquerque, N.M.).
"Etched facet in a multi quantum well structure" was invented by Paveen Apiratikul (Albuquerque, N.M.) and Damien Lambert (Los Altos, N.M.).
According to the abstract* released by the U.S. Patent & Trademark Office: "An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side...