US Patent Issued to SK SILTRON on Jan. 27 for "Device for evaluating edge defects in a silicon wafer and method therof" (South Korean Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,536,642, issued on Jan. 27, was assigned to SK SILTRON Co. LTD. (Gumi-si, South Korea).

"Device for evaluating edge defects in a silicon wafer and method therof" was invented by Jung Won Shin (Gumi-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device for evaluating edge defects in a silicon wafer comprises an image acquiring unit configured to acquire image data of an edge region of the silicon wafer, a data preprocessing unit configured to measure an edge region of the silicon wafer using a measurement equipment when an edge defect is detected in the acquired image data to determine a defect attribute of the detected edge defect, and...