ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,672, issued on Aug. 19, was assigned to SK SILTRON Co. LTD. (Gumi-si, South Korea).
"Method for evaluating of defect area of wafer" was invented by Kyu Hyung Lee (Gyeongsangbuk-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of evaluating a defect area on a wafer, the method including preparing a mirror-polished wafer, heat-treating the wafer, cleaning the wafer to remove an oxide film formed during the heat-treating, polishing the wafer, and evaluating a defect on a surface of the wafer, is disclosed."
The patent was filed on April 4, 2022, under Application No. 17/712,484.
*For further information, including images, chart...