US Patent Issued to SK keyfoundry on Oct. 28 for "Semiconductor device with deep trench isolation" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,777, issued on Oct. 28, was assigned to SK keyfoundry Inc. (Cheongju-si, South Korea).

"Semiconductor device with deep trench isolation" was invented by Kwang Il Kim (Cheongju-si, South Korea), Min Kuck Cho (Cheongju-si, South Korea), Jung Hwan Lee (Cheongju-si, South Korea), Yang Beom Kang (Cheongju-si, South Korea) and Hyun Chul Kim (Cheongju-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a first region having a first gate structure disposed on a substrate and a second region having a second gate structure disposed on the substrate, a hard mask formed on the subs...