US Patent Issued to SK keyfoundry on July 8 for "High voltage semiconductor device with ESD self-protection capability and manufacturing method thereof" (South Korean Inventor)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,727, issued on July 8, was assigned to SK keyfoundry Inc. (Cheongju-si, South Korea).

"High voltage semiconductor device with ESD self-protection capability and manufacturing method thereof" was invented by Hee Hwan Ji (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a P-type body region and an N-type drift region disposed in a substrate; a gate electrode, disposed on the P-type body region and the N-type drift region, including a high concentration doping region and a high resistance region, wherein a dopant concentration of the high concentration doping region is higher than a dopant concentration...