US Patent Issued to SK keyfoundry on Jan. 13 for "Manufacturing method of non-volatile memory device having uniform dielectric film profile" (South Korean Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,991, issued on Jan. 13, was assigned to SK keyfoundry Inc. (Cheongju-si, South Korea).

"Manufacturing method of non-volatile memory device having uniform dielectric film profile" was invented by Yang Beom Kang (Cheongju-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a non-volatile memory device, includes forming a floating gate on a substrate, depositing a first insulating layer on the floating gate, depositing a second insulating layer on the first insulating layer, depositing a third insulating layer on the second insulating layer, performing a first etch-back process on the third insulating layer to form ...