US Patent Issued to SK hynix on Sept. 30 for "Memory device and operating method of the memory device" (South Korean Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,199, issued on Sept. 30, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and operating method of the memory device" was invented by Young Hwan Choi (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, and an operating method of the memory device, includes a plurality of memory cells connected between word lines and bit lines and a voltage generator for generating a program voltage or a pass voltage, which is applied to the word lines. The memory device also includes a page buffer group for applying program allow voltages or a program inhibit voltage to the bit lines and a control circuit for...