US Patent Issued to SK hynix on Sept. 23 for "Memory device and memory system for using read compensation scheme and operating method of the same" (South Korean Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,291, issued on Sept. 23, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Memory device and memory system for using read compensation scheme and operating method of the same" was invented by Seon Ju Lee (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes: a plurality of memory blocks each including a plurality of word lines, a control operation circuit configured to perform a read operation on each of the plurality of word lines, and a control logic configured to: store a plurality of default levels, which respectively correspond to the memory blocks, in an information storage region therein, ...