US Patent Issued to SK hynix on Sept. 2 for "Memory device including row-hammer tracking circuit and operating method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,715, issued on Sept. 2, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Memory device including row-hammer tracking circuit and operating method thereof" was invented by No Geun Joo (Gyeonggi-do, South Korea) and Jun Seok Noh (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a row-hammer tracking circuit configured to: generate short interval signals each having one of first to n-th lengths based on input intervals between active commands, and generate a rate control signal based on whether a pattern of the short interval signals corresponds to a row-hammer attack pattern; and a target comma...