US Patent Issued to SK hynix on Sept. 16 for "Semiconductor memory device including stacked semiconductor layers" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,989, issued on Sept. 16, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device including stacked semiconductor layers" was invented by Sung Lae Oh (Icheon-si, South Korea), Sang Hyun Sung (Icheon-si, South Korea) and Hyun Soo Shin (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a first semiconductor layer including a memory cell array; a second semiconductor layer including a first substrate and a page buffer circuit which is configured on the first substrate; a third semiconductor layer disposed between the first semiconductor layer and the second semicond...